The conference was organised by professor vu thien bien of the university of lyon 1claude bernard, and cochaired by professor didier blavette of the. Micropatterned diamond vacuum field emission devices by anurat wisitsoratat dissertation submitted to the faculty of the graduate school of vanderbilt university in partial fulfillment of the requirements for the degree of doctor of philosophy in electrical engineering may, 2002 nashville, tennessee approved by prof. Field emission in vacuum microelectronics researchgate. The field emission fe process is a unique type of electron emission as it is due exclusively to quantummechanical effectstunneling of electrons into vacuum. Electron field emission is a quantum mechanical tunneling phenomenon of. Lateral vacuum field emission devices by karthik subramanian dissertation submitted to the faculty of the graduate school of vanderbilt university in partial fulfillment of the requirements for the degree of doctor of philosophy in electrical engineering august, 2008 nashville, tennessee approved.
Field emission can be applied into vacuum microelectronics, fineresolution electron microscopy. With this in mind, a manufacturable cold field emission diode has been developed. Field electron emission characteristics and physical. Field emission can be applied into vacuum microelectronics, fineresolution electron microscopy, and the modern highcurrent electronics fursey, g. Field emission in vacuum microelectronics sciencedirect. These efforts include work in the area of nonplanar edge emission.
Dawson kesling, field penetration, electron supply and effective work function in semiconductor fieldemission cathodes, proceedings of the 8th international vacuum microelectronics conference, portland, or, july 30. Most of the work on emission testing, addressed in section a. Microfabrication of field emission devices for vacuum. Overview of vacuum microelectronics and vacuum field emission devices. Fundamentals and applications of vacuum microelectronics zhuowen sun ee 698a outline introduction field emission basics spindt emitters and arrays beyond spindt emitters field emission display summary introduction i what is vacuum microelectronics introduction ii good power handling ability ballistic and coherent transport resistance to radiationinduced. Nowadays this phenomenon is experiencing a new life due to wonderful applications in the atomic resolution microscopy, in electronic holography, and in the vacuum micro and. Ivor brodie, consultant paul schwoebel, sri international and university of new mexico recent volumes in this series. This paper utilizes an mems carbon nanotube field emission vacuum. Field emission in vacuum microelectronics by george fursey english pdf 2005 216 pages isbn. In this paper, we report the development of a vertical and b lateral diamond field emission devices with excellent field emission characteristics. Field emission in vacuum microelectronics microdevices fursey, george n. The field electron emission fee is a unique quantummechanical effect of electrons tunneling from a condensed matter solid or liquid into vacuum.
A 2d geometrical effect, such as massless dirac fermion, can lead to new. Ada250 101 uli 1 l if u j ju, j l1, j i quarterly technical report i february 1992 fieldemitter arrays for rf vacuum microelectronics c. Pdf a novel, hybridintegrated, highprecision, vacuum. The most common context is field emission from a solid surface into vacuum. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. Many current devices under investigation work well in the laboratory but face serious manufacturing obstacles. The sensitive structure has a cathode cone tip array, a folded beam, an emitter electrode, and a feedback electrode. Materials, processing, measurement, and phenomena 2017, 35 6, 062203. Working to achieve this goal, many researchers have investigated edge emission cathodes similar to those developed by gray et al. Replaceable thead bolt for attaching a wheel rim to a wheel body are mounted in the body with the head positioned in a ushaped recess having side surfaces and a bottom wall through which the bolt shaft extends. Vme devices benefit from collisionfree motion of electrons in vacuum, thereby enabling faster modulation and higher electron energies.
Influences of aging effect on the behavior of field emission site in broad area vacuum gap eiji takahashi 1, akinori ebe 1, kiyoshi ogata 1, shigehiro komuro 2, mototaka sone 2. Influences of aging effect on the behavior of field. Recent technical and market advances have created a resurgence of interest in miniature vacuum devices based on fieldemission vacuum microelectronics. However, field emission can take place from solid or liquid surfaces, into vacuum, air, a fluid, or any nonconducting or weakly conducting dielectric. In order to produce such high fields using reasonable potentials the. Field emission from atomically sharp protuberances. Field emission in vacuum microelectronics repost avaxhome.
Displaying a bright future vacuum microelectronics. Fundamentals and applications of vacuum microelectronics. Compound and josephson highspeed devices edited by takahiko misugi and akihiro electron and ion optics miklos. Rosengreen, senior research engineer electe physical electronics laboratory may 12 1992 3 sri project 2743 0 d prepared for. Realization of an easily manufacturable field emission device will be a key to the widespread acceptance of vacuum microelectronics technology. Field emission in vacuum microelectronics microdevices physics and fabrication technologies series editors. The development of the field emission microfabricated cathode offers the potential to take advantage of the benefits of the vacuum technology in an integrated platform. Work function consideration in vacuum field emission transistor design. Vacuum microelectronics is intended for practitioners in the display, microwave, telecommunications, and microelectronics industries and in government and university research laboratories, as well as for graduate students majoring in electrical engineering, materials science, and physics. The movement from discrete transistors to integrated silicon circuits led to the rapid evolution of microscale electronics, but there has been no equivalen.
This phenomenon occurs in high electric fields 10 7. It provides cuttingedge, expert coverage of the subject. Vacuum microelectronic devices are less sensitive to temperature variations. Besides, stimulated by the needs of the vacuum microelectronics, a strong interest has developed in some features of the field emission process under specific conditions. Field emission in vacuum microelectronics springerlink. We have developed micropatterned diamond pyramidal tips with nanometer sharpness and achieved selfaligned gated diamond field emitters. Novel cold cathode materials vacuum microelectronics. George fursey field electron emission fee is a unique quantummechanical effect of electrons tunneling from a condensed matter solid or liquid into a vacuum. Usa received 9 july 1990, accepted for publication 9 november 1990 abstract. The vacuum microelectronics accelerometer is based on the field emission principle. Field emission in vacuum microelectronics book, 2005.
Fursey, field emission in vacuum microelectronics, microdevices. H photodiode film was fabricated and measured in a vacuum chamber the base pres sure was 710 torr 6. The development of planar technology for solidstate microelectronic devices and. This first mrs symposium on materials issues in vacuum microelectronics was organized because the field of vacuum microelectronics vme has been experiencing tremendous growth in recent years. Its emission capability is millions times higher than that of any other known types of electron emission. Fabrication, characterization, and modelling of self. Field emission in vacuum microelectronics books pics.
Field emission structure with shottkybarrier electrode. Field emission is a phenomenon described by quantum mechanics. Vertically selfaligned gated diamond vacuum triode fig. The first electrode structure has a pointed end andor a sharp edge andor is formed of. A washer on the bolt is held by a cotter pin passing through a hole in the bolt which is angularly offset from the long dimension of the t head. Due to its difficulty, experimental measurement of field emission from a singlelayer graphene has not been reported, although field emission from a twodimensional 2d regime has been an attractive topic. The open surface and sharp edge of graphene are beneficial for field electron emission. Microelectronics using electronbeamactivated machining. Realization of an easily manufacturable field emission device has been widely recognized as one of the keys to the widespread acceptance of vacuum microelectronics technology. A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. He is known for various work related to the field of energy and has also been credited as an early pioneer of electron beam lithography, which has become a key maskmaking technology for modern microelectronics. Field emission localization due to a local decrease of work function by selective adsorption. Kenneth radford shoulders 1927 june 7, 20 was an experimental physicist. The field electron emission is also a process capable of initiating and sustaining the generation of highpower and.
Vacuum microelectronics by wei zhu overdrive rakuten. Fabrication of silicon field emission points for vacuum. A novel, hybridintegrated, highprecision, vacuum microelectronic accelerometer with nanofield emission tips. Some applications of fieldemission cathodes in electronoptical devices.
Field emission in vacuum microelectronics george n. Field emission in vacuum microelectronics by george n. Nowadays this phenomenon is experiencing a new life due to wonderful. Field emission in vacuum microelectronics microdevices. For several operational conditions, these new devices have inherent advantages over their solidstate counterparts. Diamond vacuum field emission devices university of chicago. A novel, hybridintegrated, highprecision, vacuum microelectronic. Vacuum integrated circuits and field emission fe devices with geometries on the micron and submicron scale have been discussed as alternatives to solid state devices for high speed and hostile environment application as well as for miniature electron sources for crts. Outline introduction field emission basics spindt emitters and arrays beyond spindt emitters field emission display summary. The efficiency of this emission process is tens of millions of times higher than in other known emission processes. Field emission in vacuum microelectronics pdf free download.
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